Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, Jeon Eui | - |
| dc.contributor.author | Byun, Jeong Soo | - |
| dc.contributor.author | Kim, Sun Il | - |
| dc.contributor.author | Ahn, Byung Tae | - |
| dc.date.accessioned | 2009-06-18T01:57:40Z | - |
| dc.date.available | 2009-06-18T01:57:40Z | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | Japanese Journal of Applied Physics, Vol.44, No.1A, pp.145-146 | en |
| dc.identifier.uri | http://hdl.handle.net/10203/9551 | - |
| dc.description.abstract | The stress hump phenomenon observed at a low temperature of approximately 140C during in situ stress-temperature measurement of sputtered Ni thin film on a (001) Si substrate has been investigated. We found that the stress hump was not related to the formation of NiSi2, but originated from the thickening of an amorphous Ni–Si intermixing layer in the temperature range of 100–140C followed by the formation of the Ni2Si phase at temperatures above 140C. | en |
| dc.description.sponsorship | The Korea Science and Engineering Foundation (KOSEF) financially supported this work. | en |
| dc.language.iso | en_US | en |
| dc.publisher | The Japan Society of Applied Physics | en |
| dc.subject | NiSi | en |
| dc.subject | stress hump | en |
| dc.subject | phase formation sequence | en |
| dc.subject | interdiffusion | en |
| dc.title | Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide | en |
| dc.type | Article | en |
| dc.identifier.doi | 10.1143/JJAP.44.145 | - |
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