Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition

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We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a SiO(2)/p-Si substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD-grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of >7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in good TFT behavior with an on/off current ratio of >10(6) and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance, or no saturation. The ALD-grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen. Copyright (C) 2010 John Wiley & Sons, Ltd.
Publisher
JOHN WILEY & SONS LTD
Issue Date
2010-06
Language
English
Article Type
Article; Proceedings Paper
Citation

SURFACE AND INTERFACE ANALYSIS, v.42, pp.955 - 958

ISSN
0142-2421
URI
http://hdl.handle.net/10203/95314
Appears in Collection
MS-Journal Papers(저널논문)
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