DC Field | Value | Language |
---|---|---|
dc.contributor.author | Eom, Ji Hye | ko |
dc.contributor.author | Lee, Kye Ung | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-17T02:48:37Z | - |
dc.date.available | 2009-06-17T02:48:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.194 - 197 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9500 | - |
dc.description.abstract | A polycrystalline Si film with uniform and large grains can be grown by crystallizing with Al/Ni chloride vapor transport. At the initial stage of crystallization, the poly-Si grains had round-shaped cores with needles at the growth front. It showed that the needles were grown by the Ni-induced lateral crystallization process and the sidewall of the needles was enlarged by the Al-induced crystallization process. The needles were emerged coherently to an extent by the sidewall growth. As a result, a poly-Si film with grains larger than 15 mu m diam and fewer intragrain defects was obtained. The Ni concentration was constant through out the film thickness with a value of 1 x 10(19) cm(-3). The Al concentration at the surface was 10(19) cm(-3) and was reduced below 10(16) cm(-3) at 25 -nm depth. The thin film transistor utilizing the film showed an electron mobility of 47 cm(2)/V s at a drain voltage of V-d = 0.1. But the threshold voltage was 5.2 V that is considered as relatively high due to Al doping. (c) 2007 The Electrochemical Society. | - |
dc.description.sponsorship | The Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ALUMINUM-INDUCED CRYSTALLIZATION | - |
dc.subject | LOW-TEMPERATURE CRYSTALLIZATION | - |
dc.subject | INDUCED LATERAL CRYSTALLIZATION | - |
dc.subject | SILICON THIN-FILMS | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | TRANSISTORS | - |
dc.subject | LAYER | - |
dc.title | Microstructural characterization of polycrystalline Si films grown by vapor-induced crystallization of amorphous Si using Al/Ni chloride | - |
dc.type | Article | - |
dc.identifier.wosid | 000243977500071 | - |
dc.identifier.scopusid | 2-s2.0-33846976733 | - |
dc.type.rims | ART | - |
dc.citation.volume | 154 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 194 | - |
dc.citation.endingpage | 197 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.2429047 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Eom, Ji Hye | - |
dc.contributor.nonIdAuthor | Lee, Kye Ung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ALUMINUM-INDUCED CRYSTALLIZATION | - |
dc.subject.keywordPlus | LOW-TEMPERATURE CRYSTALLIZATION | - |
dc.subject.keywordPlus | INDUCED LATERAL CRYSTALLIZATION | - |
dc.subject.keywordPlus | SILICON THIN-FILMS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | LAYER | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.