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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

A novel vapor-induced crystallization of amorphous Si using the transport of Al/Ni chloride

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dc.contributor.authorEom, JHko
dc.contributor.authorLee, KUko
dc.contributor.authorAhn, Byung Taeko
dc.date.accessioned2009-06-17T02:43:23Z-
dc.date.available2009-06-17T02:43:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.3, pp.65 - 67-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/9498-
dc.description.abstractAl/Ni chloride vapor has been employed for the first time to enhance the crystallization of amorphous Si (a-Si) films. a-Si films under the vapor at 480 degrees C were completely crystallized in 5 h. At the initial stage of the vapor induced crystallization (VIC), the seed grains were nucleated evenly throughout the film and their grain size was uniform. The final grain size was larger than 10 mm, depending on the process conditions. The poly-Si films showed a very smooth surface with a roughness of 4.26 angstrom due to the double surface-oxide layer formed during the VIC process. (C) 2005 The Electrochemical Society.-
dc.description.sponsorshipThe Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this articleen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectLOW-TEMPERATURE CRYSTALLIZATION-
dc.subjectSILICON THIN-FILMS-
dc.subjectALUMINUM-INDUCED CRYSTALLIZATION-
dc.subjectINDUCED LATERAL CRYSTALLIZATION-
dc.subjectGLASS-
dc.titleA novel vapor-induced crystallization of amorphous Si using the transport of Al/Ni chloride-
dc.typeArticle-
dc.identifier.wosid000228326400021-
dc.identifier.scopusid2-s2.0-15744374817-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue3-
dc.citation.beginningpage65-
dc.citation.endingpage67-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.1857111-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorEom, JH-
dc.contributor.nonIdAuthorLee, KU-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLOW-TEMPERATURE CRYSTALLIZATION-
dc.subject.keywordPlusSILICON THIN-FILMS-
dc.subject.keywordPlusALUMINUM-INDUCED CRYSTALLIZATION-
dc.subject.keywordPlusINDUCED LATERAL CRYSTALLIZATION-
dc.subject.keywordPlusGLASS-
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