DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, YW | ko |
dc.contributor.author | Lee, JN | ko |
dc.contributor.author | Jang, TW | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-17T01:58:49Z | - |
dc.date.available | 2009-06-17T01:58:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.20, no.1, pp.2 - 4 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9490 | - |
dc.description.abstract | Solid phase crystallization of amorphous silicon films for poly-Si thin-film transistors (TFT's) has advantages of low cost and excellent uniformity, but the crystallization temperature is too high, Using a microwave annealing method, we lowered the crystallization temperature and shortened the crystallization time. The complete crystallization time at 550 degrees C was within 2 h. The device parameters of TFT's with the poly-Si films crystallized by microwave annealing were similar to those of TFT's with the poly-Si films crystallized by conventional furnace annealing. The new crystallization method seems attractive because of low crystallization temperature, short crystallization time, and comparable film properties. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000077934100001 | - |
dc.identifier.scopusid | 2-s2.0-0002957505 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 2 | - |
dc.citation.endingpage | 4 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Choi, YW | - |
dc.contributor.nonIdAuthor | Lee, JN | - |
dc.contributor.nonIdAuthor | Jang, TW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | microwave | - |
dc.subject.keywordAuthor | TFT | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | F+ IMPLANTATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | OXIDE | - |
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