A Small Space Radiation Monitor Capable of Measuring Multiple I-SD-V-GS Values of MOSFET

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A small space radiation monitor capable of taking measurements of gate voltages of MOSFET for various drain currents has been developed for flight experiments aboard satellites. Measuring multiple I-SD-V-GS values of MOSFET is expected to provide better understanding of the electronic response to ionizing radiation in space. In particular, separating the effects of oxide charge densities, interface charge densities, and temperatures is anticipated for the accurate determination of total ionizing dose. Description of the instrumentation for space-borne measurements is given, along with a summary of the anticipated results from this experiment.
Publisher
TAYLOR & FRANCIS LTD
Issue Date
2010
Language
English
Article Type
Article
Keywords

MODEL; DOSIMETER; KITSAT-1

Citation

JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, v.47, no.4, pp.340 - 344

ISSN
0022-3131
DOI
10.1080/18811248.2010.9711963
URI
http://hdl.handle.net/10203/94880
Appears in Collection
RIMS Journal Papers
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