DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jun, Myungsim | ko |
dc.contributor.author | Park, Youngsam | ko |
dc.contributor.author | Hyun, Younghoon | ko |
dc.contributor.author | Zyung, Taehyoung | ko |
dc.contributor.author | Jang, Moongyu | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.date.accessioned | 2013-03-08T23:41:39Z | - |
dc.date.available | 2013-03-08T23:41:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.3 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94687 | - |
dc.description.abstract | Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, and saturation current were investigated as a function of gate length and channel width. The device with a gate length of 30 nm showed excellent short channel characteristics with an on/off current ratio larger than 10(7), an off-leakage current less than 10 pA/mu m, and a subthreshold swing of 110 mV/decades. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592483] | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | MOSFETS | - |
dc.subject | SUBTHRESHOLD | - |
dc.subject | DIELECTRICS | - |
dc.subject | DEVICE | - |
dc.title | High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm | - |
dc.type | Article | - |
dc.identifier.wosid | 000291111300035 | - |
dc.identifier.scopusid | 2-s2.0-79958103445 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.3592483 | - |
dc.contributor.nonIdAuthor | Jun, Myungsim | - |
dc.contributor.nonIdAuthor | Park, Youngsam | - |
dc.contributor.nonIdAuthor | Hyun, Younghoon | - |
dc.contributor.nonIdAuthor | Zyung, Taehyoung | - |
dc.contributor.nonIdAuthor | Jang, Moongyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | SUBTHRESHOLD | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | DEVICE | - |
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