High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

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dc.contributor.authorJun, Myungsimko
dc.contributor.authorPark, Youngsamko
dc.contributor.authorHyun, Younghoonko
dc.contributor.authorZyung, Taehyoungko
dc.contributor.authorJang, Moongyuko
dc.contributor.authorChoi, Sung-Jinko
dc.date.accessioned2013-03-08T23:41:39Z-
dc.date.available2013-03-08T23:41:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-05-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.3-
dc.identifier.issn1071-1023-
dc.identifier.urihttp://hdl.handle.net/10203/94687-
dc.description.abstractPlatinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, and saturation current were investigated as a function of gate length and channel width. The device with a gate length of 30 nm showed excellent short channel characteristics with an on/off current ratio larger than 10(7), an off-leakage current less than 10 pA/mu m, and a subthreshold swing of 110 mV/decades. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592483]-
dc.languageEnglish-
dc.publisherA V S AMER INST PHYSICS-
dc.subjectMOSFETS-
dc.subjectSUBTHRESHOLD-
dc.subjectDIELECTRICS-
dc.subjectDEVICE-
dc.titleHigh performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm-
dc.typeArticle-
dc.identifier.wosid000291111300035-
dc.identifier.scopusid2-s2.0-79958103445-
dc.type.rimsART-
dc.citation.volume29-
dc.citation.issue3-
dc.citation.publicationnameJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.identifier.doi10.1116/1.3592483-
dc.contributor.nonIdAuthorJun, Myungsim-
dc.contributor.nonIdAuthorPark, Youngsam-
dc.contributor.nonIdAuthorHyun, Younghoon-
dc.contributor.nonIdAuthorZyung, Taehyoung-
dc.contributor.nonIdAuthorJang, Moongyu-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusSUBTHRESHOLD-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusDEVICE-
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