Facile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties

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dc.contributor.authorCho, Nam-Gyuko
dc.contributor.authorWhitfield, George C.ko
dc.contributor.authorYang, Dae-Jinko
dc.contributor.authorKim, Ho-Giko
dc.contributor.authorTuller, Harry L.ko
dc.contributor.authorKim, Il-Dooko
dc.date.accessioned2013-03-08T22:39:39Z-
dc.date.available2013-03-08T22:39:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.12, pp.435 - 439-
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/10203/94536-
dc.description.abstractThis work presents a new route for enhancing the sensor response kinetics of macroporous SnO2 films. Well-ordered arrays of SnO2 hollow hemispheres, functionalized with catalytic Pt, were synthesized using colloidal templating and cosputtering, followed by subsequent heat-treatment. The diameter and shell thickness of the Pt-functionalized SnO2 hollow hemispheres were 800 and 25 nm, respectively. High resolution transmission electron microscopy analysis indicates that catalytic Pt nanoparticles, with size of a few nanometers, coat the top surface of SnO2 hemispheres, enabling chemical reactions to proceed at lower temperatures. Sensors composed of Pt-functionalized SnO2 hollow hemispheres show attractive gas sensing characteristics, such as reduced operation temperature (<= 250 degrees C) combined with improved sensitivity (R/R-o = 4.08 to 250 ppm H-2), reduced baseline resistance, and enhanced response/recovery properties compared to sensors using pristine SnO2 hollow hemispheres at an operating temperature of 250 degrees C. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489949] All rights reserved.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectCHEMICAL-MODIFICATION-
dc.subjectOXIDE FILMS-
dc.subjectTHIN-FILMS-
dc.subjectSENSORS-
dc.subjectSURFACE-
dc.subjectNANOSTRUCTURES-
dc.subjectSENSITIVITY-
dc.subjectXPS-
dc.titleFacile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties-
dc.typeArticle-
dc.identifier.wosid000283938300095-
dc.identifier.scopusid2-s2.0-78449270656-
dc.type.rimsART-
dc.citation.volume157-
dc.citation.issue12-
dc.citation.beginningpage435-
dc.citation.endingpage439-
dc.citation.publicationnameJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.identifier.doi10.1149/1.3489949-
dc.contributor.localauthorKim, Ho-Gi-
dc.contributor.localauthorKim, Il-Doo-
dc.contributor.nonIdAuthorWhitfield, George C.-
dc.contributor.nonIdAuthorYang, Dae-Jin-
dc.contributor.nonIdAuthorTuller, Harry L.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-MODIFICATION-
dc.subject.keywordPlusOXIDE FILMS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusSENSITIVITY-
dc.subject.keywordPlusXPS-
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