DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Nam-Gyu | ko |
dc.contributor.author | Whitfield, George C. | ko |
dc.contributor.author | Yang, Dae-Jin | ko |
dc.contributor.author | Kim, Ho-Gi | ko |
dc.contributor.author | Tuller, Harry L. | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.date.accessioned | 2013-03-08T22:39:39Z | - |
dc.date.available | 2013-03-08T22:39:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.12, pp.435 - 439 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94536 | - |
dc.description.abstract | This work presents a new route for enhancing the sensor response kinetics of macroporous SnO2 films. Well-ordered arrays of SnO2 hollow hemispheres, functionalized with catalytic Pt, were synthesized using colloidal templating and cosputtering, followed by subsequent heat-treatment. The diameter and shell thickness of the Pt-functionalized SnO2 hollow hemispheres were 800 and 25 nm, respectively. High resolution transmission electron microscopy analysis indicates that catalytic Pt nanoparticles, with size of a few nanometers, coat the top surface of SnO2 hemispheres, enabling chemical reactions to proceed at lower temperatures. Sensors composed of Pt-functionalized SnO2 hollow hemispheres show attractive gas sensing characteristics, such as reduced operation temperature (<= 250 degrees C) combined with improved sensitivity (R/R-o = 4.08 to 250 ppm H-2), reduced baseline resistance, and enhanced response/recovery properties compared to sensors using pristine SnO2 hollow hemispheres at an operating temperature of 250 degrees C. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489949] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | CHEMICAL-MODIFICATION | - |
dc.subject | OXIDE FILMS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SENSORS | - |
dc.subject | SURFACE | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | SENSITIVITY | - |
dc.subject | XPS | - |
dc.title | Facile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties | - |
dc.type | Article | - |
dc.identifier.wosid | 000283938300095 | - |
dc.identifier.scopusid | 2-s2.0-78449270656 | - |
dc.type.rims | ART | - |
dc.citation.volume | 157 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 435 | - |
dc.citation.endingpage | 439 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3489949 | - |
dc.contributor.localauthor | Kim, Ho-Gi | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Whitfield, George C. | - |
dc.contributor.nonIdAuthor | Yang, Dae-Jin | - |
dc.contributor.nonIdAuthor | Tuller, Harry L. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-MODIFICATION | - |
dc.subject.keywordPlus | OXIDE FILMS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | SENSITIVITY | - |
dc.subject.keywordPlus | XPS | - |
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