DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee S. | ko |
dc.contributor.author | Jeong J.-H. | ko |
dc.contributor.author | Wu Z. | ko |
dc.contributor.author | Park Y.-W. | ko |
dc.contributor.author | Kim W.M. | ko |
dc.contributor.author | Cheong B.-K. | ko |
dc.date.accessioned | 2013-03-08T21:24:46Z | - |
dc.date.available | 2013-03-08T21:24:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.7, pp.H612 - H615 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94341 | - |
dc.description.abstract | For potential use in phase-change memory (PCM) devices, a Ge-doped SbTe (Ge-ST) was investigated with respect to both material properties and PCM device characteristics. Compared with Ge(2)Sb(2)Te(5) (GST), the used Ge-ST (Ge(5.3)Sb(77.7)Te(17)) was characterized to have a lower melting temperature (814 K), a higher crystallization temperature (436 K), and a lower electrical resistivity in both amorphous and crystalline states. The Ge-ST devices have a much faster operation speed by about 1 order and consume less RESET power compared with the GST devices. Nevertheless, a higher RESET-programming current was required due to a lower dynamic resistance. Device reliability properties such as write/erase cycling endurance and data retention properties were also examined and found to be comparable to those of the GST devices, suggesting that the Ge-ST is a promising phase-change material for high speed PCMs. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3133252] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | FILMS | - |
dc.subject | MECHANISM | - |
dc.subject | CELL | - |
dc.subject | TE | - |
dc.title | Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe | - |
dc.type | Article | - |
dc.identifier.wosid | 000267887500068 | - |
dc.identifier.scopusid | 2-s2.0-65949119314 | - |
dc.type.rims | ART | - |
dc.citation.volume | 156 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | H612 | - |
dc.citation.endingpage | H615 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.3133252 | - |
dc.contributor.localauthor | Wu Z. | - |
dc.contributor.nonIdAuthor | Lee S. | - |
dc.contributor.nonIdAuthor | Jeong J.-H. | - |
dc.contributor.nonIdAuthor | Park Y.-W. | - |
dc.contributor.nonIdAuthor | Kim W.M. | - |
dc.contributor.nonIdAuthor | Cheong B.-K. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordPlus | TE | - |
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