DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong J.-H. | ko |
dc.contributor.author | Lee H.S. | ko |
dc.contributor.author | Lee S. | ko |
dc.contributor.author | Lee T.S. | ko |
dc.contributor.author | Kim W.M. | ko |
dc.contributor.author | Zhe W. | ko |
dc.contributor.author | Kim S.C. | ko |
dc.contributor.author | Oh K.H. | ko |
dc.contributor.author | Cheong B.-K. | ko |
dc.date.accessioned | 2013-03-08T20:55:47Z | - |
dc.date.available | 2013-03-08T20:55:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94272 | - |
dc.description.abstract | A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase ( SET) and vice versa ( RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te ( 4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te ( 2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 103 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te ( 2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition ( Sb : Te similar to 2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PHASE-CHANGE MEDIA | - |
dc.subject | FILMS | - |
dc.subject | NUCLEATION | - |
dc.subject | BEHAVIOR | - |
dc.title | Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio | - |
dc.type | Article | - |
dc.identifier.wosid | 000262449000020 | - |
dc.identifier.scopusid | 2-s2.0-63649143924 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/0022-3727/42/3/035104 | - |
dc.contributor.localauthor | Zhe W. | - |
dc.contributor.nonIdAuthor | Jeong J.-H. | - |
dc.contributor.nonIdAuthor | Lee H.S. | - |
dc.contributor.nonIdAuthor | Lee S. | - |
dc.contributor.nonIdAuthor | Lee T.S. | - |
dc.contributor.nonIdAuthor | Kim W.M. | - |
dc.contributor.nonIdAuthor | Kim S.C. | - |
dc.contributor.nonIdAuthor | Oh K.H. | - |
dc.contributor.nonIdAuthor | Cheong B.-K. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHASE-CHANGE MEDIA | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
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