DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yuk, Jong Min | ko |
dc.contributor.author | No, Y.S. | ko |
dc.contributor.author | Kim, T.W. | ko |
dc.contributor.author | Kim, J.Y. | ko |
dc.contributor.author | Choi, W.K. | ko |
dc.date.accessioned | 2013-03-08T19:32:41Z | - |
dc.date.available | 2013-03-08T19:32:41Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.246 - 249 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94059 | - |
dc.description.abstract | Selected-area electron diffraction patterns for ZnO/Si heterostructures annealed at 800 degrees C showed that 30 degrees rotation domains were generated in the ZnO thin films. The plane-view high-resolution transmission electron microscopy (HRTEM) images for the ZnO thin films grown on n-Si substrates annealed at 800 degrees C showed that asymmetrical tilt grain boundaries were tilted by 16.5 degrees and 13.5 degrees from two grains with a 30 degrees tilted angle. The grain boundary planes of the two grains were (35 (8) over bar0) and (23 (5) over bar0). The atomic arrangements of the asymmetrically-tilted grain boundaries in 30 degrees rotation domains of ZnO thin films grown on n-Si substrates annealed at 800 degrees C are described on the basis of the HRTEM results. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | EPITAXIAL-FILMS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | BUFFER LAYER | - |
dc.subject | DEPENDENCE | - |
dc.subject | EMISSION | - |
dc.subject | EDGE | - |
dc.title | Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000268023600054 | - |
dc.identifier.scopusid | 2-s2.0-69249161979 | - |
dc.type.rims | ART | - |
dc.citation.volume | 55 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 246 | - |
dc.citation.endingpage | 249 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Yuk, Jong Min | - |
dc.contributor.nonIdAuthor | No, Y.S. | - |
dc.contributor.nonIdAuthor | Kim, T.W. | - |
dc.contributor.nonIdAuthor | Kim, J.Y. | - |
dc.contributor.nonIdAuthor | Choi, W.K. | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | ZnO thin film | - |
dc.subject.keywordAuthor | Si substrate | - |
dc.subject.keywordAuthor | Rotation domain | - |
dc.subject.keywordAuthor | Grain boundary | - |
dc.subject.keywordAuthor | Atomic arrangement | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | EPITAXIAL-FILMS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | EDGE | - |
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