ZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth

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dc.contributor.authorKim, Dong-Chanko
dc.contributor.authorLee, Ju-Hoko
dc.contributor.authorCho, Hyung-Kounko
dc.contributor.authorKim, Jae-Hyunko
dc.contributor.authorLee, Jeong-Yongko
dc.date.accessioned2013-03-08T18:15:33Z-
dc.date.available2013-03-08T18:15:33Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-01-
dc.identifier.citationCRYSTAL GROWTH & DESIGN, v.10, no.1, pp.321 - 326-
dc.identifier.issn1528-7483-
dc.identifier.urihttp://hdl.handle.net/10203/93868-
dc.description.abstractWe have developed a novel method to grow thick single crystalline ZnO films for the use of supporting layers by employing nanorod-assisted epitaxial lateral overgrowth (NRELO). The NRELO ZnO films were epitaxially grown Oil vertically arrayed nanorods at reduced temperatures by metalorganic chemical vapor deposition. The resultant films had epitaxial structures similar to the conventional ZnO Films On sapphire and relatively low dislocation density. During the or growth evolution of the NRELO films, the dominant stress was changed from nearly stress-free in the nanorods to strong in-plane tensile stress in the top region, and the rotation of the (0002) plane clearly disappeared in the NRELO ZnO film. This study shows that ZnO NRELO has the possibility to be used as Supporting layers ill optoelectronic devices with transparent and vertical stack structures because it exhibited high transparency, electrically semiconducting. and low detect density at the same time.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectGALLIUM NITRIDE-
dc.subjectGROWTH-
dc.subjectFILMS-
dc.subjectTRANSPARENT-
dc.subjectTRANSISTORS-
dc.subjectGAN-
dc.titleZnO Wurtzite Single Crystals Prepared by Nanorod-Assisted Epitaxial Lateral Overgrowth-
dc.typeArticle-
dc.identifier.wosid000274757100050-
dc.identifier.scopusid2-s2.0-74049150783-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue1-
dc.citation.beginningpage321-
dc.citation.endingpage326-
dc.citation.publicationnameCRYSTAL GROWTH & DESIGN-
dc.identifier.doi10.1021/cg900907d-
dc.contributor.localauthorLee, Jeong-Yong-
dc.contributor.nonIdAuthorKim, Dong-Chan-
dc.contributor.nonIdAuthorCho, Hyung-Koun-
dc.contributor.nonIdAuthorKim, Jae-Hyun-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusGALLIUM NITRIDE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusGAN-
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