DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Seok-Jun | ko |
dc.contributor.author | Choi, Chaun-Gi | ko |
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2009-06-10T08:22:08Z | - |
dc.date.available | 2009-06-10T08:22:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-02 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9312 | - |
dc.description.abstract | Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process. The ZTO thin films are highly transparent (> 90% transmittance) in the visible region. The ZTO TFTs fabricated at 400 and 500 degrees C are operated in enhancement mode. The TFT annealed at 500 degrees C shows a mobility of 14.11 cm(2) V(-1) s(-1), a threshold voltage of 1.71V, a subthreshold slope of 0.4 V dec(-1) and an on-off current ratio greater than 10(8). In addition, we investigated the gate bias stability of the TFT. Positive gate bias results in a positive shift of the threshold voltage due to the charge trapping in the channel/dielectric interface. | - |
dc.description.sponsorship | This research was financially supported by the Ministry of Knowledge Economy (MKE) andKorea IndustrialTechnology Foundation (KOTEF) through the Human Resource Training Project for Strategic Technology. This work was supported by theKorea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No R11-2007-045- 03002-0). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | High performance solution-processed amorphous zinc tin oxide thin film transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000262449000022 | - |
dc.identifier.scopusid | 2-s2.0-63649106046 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 3 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/0022-3727/42/3/035106 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.nonIdAuthor | Choi, Chaun-Gi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
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