DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung-Won | ko |
dc.contributor.author | Park, Kwangchol | ko |
dc.contributor.author | Han, Byeol | ko |
dc.contributor.author | Son, Sang-Ho | ko |
dc.contributor.author | Rha, Sa-Kyun | ko |
dc.contributor.author | Park, Chong-Ook | ko |
dc.contributor.author | Lee, Won-Jun | ko |
dc.date.accessioned | 2013-03-08T12:33:53Z | - |
dc.date.available | 2013-03-08T12:33:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.7, pp.23 - 26 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93016 | - |
dc.description.abstract | We report the process for the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to Si(2)Cl(6) and O(3). The deposition was governed by a self-limiting ALD reaction at 403-453 degrees C, and the growth rate at 453 degrees C was saturated at 0.32 nm/cycle for Si(2)Cl(6) exposures over 1x10(8) L. However, at 471 degrees C or higher temperatures, the thermal decomposition of Si(2)Cl(6) and the oxidation of Si by O(3) dominated the deposition, resulting in high growth rates and Si-rich films. The ALD films exhibited excellent electrical properties that were equivalent to those of low-pressure chemical vapor deposition films. (C) 2008 The Electrochemical Society. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | BINARY REACTION SEQUENCE | - |
dc.subject | SURFACE-REACTIONS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SIO2 | - |
dc.subject | GROWTH | - |
dc.subject | PRECURSORS | - |
dc.subject | SIH2CL2 | - |
dc.subject | OZONE | - |
dc.subject | H2O | - |
dc.title | Atomic layer deposition of silicon oxide thin films by alternating exposures to Si(2)Cl(6) and O(3) | - |
dc.type | Article | - |
dc.identifier.wosid | 000255982800013 | - |
dc.identifier.scopusid | 2-s2.0-43949088832 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 23 | - |
dc.citation.endingpage | 26 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.2908201 | - |
dc.contributor.localauthor | Park, Chong-Ook | - |
dc.contributor.nonIdAuthor | Lee, Seung-Won | - |
dc.contributor.nonIdAuthor | Han, Byeol | - |
dc.contributor.nonIdAuthor | Son, Sang-Ho | - |
dc.contributor.nonIdAuthor | Rha, Sa-Kyun | - |
dc.contributor.nonIdAuthor | Lee, Won-Jun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | BINARY REACTION SEQUENCE | - |
dc.subject.keywordPlus | SURFACE-REACTIONS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | SIH2CL2 | - |
dc.subject.keywordPlus | OZONE | - |
dc.subject.keywordPlus | H2O | - |
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