Atomic layer deposition of silicon oxide thin films by alternating exposures to Si(2)Cl(6) and O(3)

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dc.contributor.authorLee, Seung-Wonko
dc.contributor.authorPark, Kwangcholko
dc.contributor.authorHan, Byeolko
dc.contributor.authorSon, Sang-Hoko
dc.contributor.authorRha, Sa-Kyunko
dc.contributor.authorPark, Chong-Ookko
dc.contributor.authorLee, Won-Junko
dc.date.accessioned2013-03-08T12:33:53Z-
dc.date.available2013-03-08T12:33:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.7, pp.23 - 26-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/93016-
dc.description.abstractWe report the process for the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to Si(2)Cl(6) and O(3). The deposition was governed by a self-limiting ALD reaction at 403-453 degrees C, and the growth rate at 453 degrees C was saturated at 0.32 nm/cycle for Si(2)Cl(6) exposures over 1x10(8) L. However, at 471 degrees C or higher temperatures, the thermal decomposition of Si(2)Cl(6) and the oxidation of Si by O(3) dominated the deposition, resulting in high growth rates and Si-rich films. The ALD films exhibited excellent electrical properties that were equivalent to those of low-pressure chemical vapor deposition films. (C) 2008 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectBINARY REACTION SEQUENCE-
dc.subjectSURFACE-REACTIONS-
dc.subjectROOM-TEMPERATURE-
dc.subjectSIO2-
dc.subjectGROWTH-
dc.subjectPRECURSORS-
dc.subjectSIH2CL2-
dc.subjectOZONE-
dc.subjectH2O-
dc.titleAtomic layer deposition of silicon oxide thin films by alternating exposures to Si(2)Cl(6) and O(3)-
dc.typeArticle-
dc.identifier.wosid000255982800013-
dc.identifier.scopusid2-s2.0-43949088832-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue7-
dc.citation.beginningpage23-
dc.citation.endingpage26-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.2908201-
dc.contributor.localauthorPark, Chong-Ook-
dc.contributor.nonIdAuthorLee, Seung-Won-
dc.contributor.nonIdAuthorHan, Byeol-
dc.contributor.nonIdAuthorSon, Sang-Ho-
dc.contributor.nonIdAuthorRha, Sa-Kyun-
dc.contributor.nonIdAuthorLee, Won-Jun-
dc.type.journalArticleArticle-
dc.subject.keywordPlusBINARY REACTION SEQUENCE-
dc.subject.keywordPlusSURFACE-REACTIONS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSIO2-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPRECURSORS-
dc.subject.keywordPlusSIH2CL2-
dc.subject.keywordPlusOZONE-
dc.subject.keywordPlusH2O-
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