Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties

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dc.contributor.authorJeong, JSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorCho, JHko
dc.contributor.authorLee, CJko
dc.contributor.authorAn, SJko
dc.contributor.authorYi, GCko
dc.contributor.authorGronsky, Rko
dc.date.accessioned2013-03-08T11:46:04Z-
dc.date.available2013-03-08T11:46:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-10-
dc.identifier.citationNANOTECHNOLOGY, v.16, pp.2455 - 2461-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10203/92934-
dc.description.abstractWell-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectPHYSICAL VAPOR-DEPOSITION-
dc.subjectZINC-OXIDE NANOWIRES-
dc.subjectCATALYST-FREE GROWTH-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectMECHANISM-
dc.subjectMICROCRYSTALS-
dc.subjectNANOBELTS-
dc.subjectCRYSTALS-
dc.subjectNANORODS-
dc.titleGrowth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties-
dc.typeArticle-
dc.identifier.wosid000232906200079-
dc.identifier.scopusid2-s2.0-25444499440-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.beginningpage2455-
dc.citation.endingpage2461-
dc.citation.publicationnameNANOTECHNOLOGY-
dc.identifier.doi10.1088/0957-4484/16/10/078-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorJeong, JS-
dc.contributor.nonIdAuthorCho, JH-
dc.contributor.nonIdAuthorLee, CJ-
dc.contributor.nonIdAuthorAn, SJ-
dc.contributor.nonIdAuthorYi, GC-
dc.contributor.nonIdAuthorGronsky, R-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHYSICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusZINC-OXIDE NANOWIRES-
dc.subject.keywordPlusCATALYST-FREE GROWTH-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusMICROCRYSTALS-
dc.subject.keywordPlusNANOBELTS-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordPlusNANORODS-
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