DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xia, YH | ko |
dc.contributor.author | Jee, YK | ko |
dc.contributor.author | Yu, Jin | ko |
dc.contributor.author | Lee, TY | ko |
dc.date.accessioned | 2013-03-08T10:14:47Z | - |
dc.date.available | 2013-03-08T10:14:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.citation | JOURNAL OF ELECTRONIC MATERIALS, v.37, no.12, pp.1858 - 1862 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92814 | - |
dc.description.abstract | Aluminum was added into Sn-3.0Ag (wt.%) solder to investigate the effect of aluminum concentration on the interfacial reaction of Sn-3.0Ag-xAl solders with copper or electroless nickel immersion gold (ENIG) metallizations. Four different Sn-3.0Ag-xAl solders (x = 0 wt.%, 0.1 wt.%, 0.5 wt.%, and 1.0 wt.%) were used for comparison. It was found that the composition, morphology, and thickness of interfacial reaction products were strongly dependent on aluminum concentration. At low aluminum concentration (0.1 wt.%), the typical Cu(6)Sn(5) layer was formed at the interface. When the aluminum concentration was 0.5 wt.%, a continuous CuAl(2) layer spalled off from the interfacial Cu-Sn intermetallic compound (IMC) layer. Only a planar CuAl(2) layer was observed at the interface when the aluminum concentration was increased to 1.0 wt.%. In Sn-Ag-Al/ENIG reactions, Ni(3)Sn(4) was formed and spallation occurred near the interface in the Sn-3.0Ag and Sn-3.0Ag-0.1Al solder joints. When the aluminum concentration was higher than 0.1 wt.%, a thin planar AuAl compound formed at the interface. There was no P-rich phase formation that retarded the spalling phenomenon. The aluminum additive in Sn-Ag solder inhibited the growth of IMCs in the reaction with copper or ENIG metallizations, which was favorable for the reliability of solder joints. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | LEAD-FREE SOLDERS | - |
dc.subject | INTERMETALLIC COMPOUNDS | - |
dc.subject | PHOSPHORUS-CONTENT | - |
dc.subject | NI-P | - |
dc.subject | JOINTS | - |
dc.subject | SN | - |
dc.subject | MICROSTRUCTURES | - |
dc.subject | GROWTH | - |
dc.subject | ALLOY | - |
dc.subject | CU | - |
dc.title | Effect of Aluminum Concentration on the Interfacial Reactions of Sn-3.0Ag-xAl Solders with Copper and ENIG Metallizations | - |
dc.type | Article | - |
dc.identifier.wosid | 000260377400017 | - |
dc.identifier.scopusid | 2-s2.0-54949151844 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1858 | - |
dc.citation.endingpage | 1862 | - |
dc.citation.publicationname | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1007/s11664-008-0548-7 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yu, Jin | - |
dc.contributor.nonIdAuthor | Xia, YH | - |
dc.contributor.nonIdAuthor | Lee, TY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Sn-Ag-Al | - |
dc.subject.keywordAuthor | lead-free solder | - |
dc.subject.keywordAuthor | interfacial reaction | - |
dc.subject.keywordAuthor | intermetallic compound | - |
dc.subject.keywordPlus | LEAD-FREE SOLDERS | - |
dc.subject.keywordPlus | INTERMETALLIC COMPOUNDS | - |
dc.subject.keywordPlus | PHOSPHORUS-CONTENT | - |
dc.subject.keywordPlus | NI-P | - |
dc.subject.keywordPlus | JOINTS | - |
dc.subject.keywordPlus | SN | - |
dc.subject.keywordPlus | MICROSTRUCTURES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | CU | - |
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