Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate

Cited 50 time in webofscience Cited 0 time in scopus
  • Hit : 338
  • Download : 0
In this letter, we report on the role of Mn doping in markedly reducing leakage currents in Ba0.6Sr0.4TiO3 (BST) high-K gate dielectrics utilized in organic thin film transistors (OTFTs) fabricated on plastic substrates. Undoped and 3% Mn-doped BST thin films, deposited by rf magnetron sputtering at room temperature on Pt/Ti/SiO2/Si substrates, exhibited relative dielectric constants of similar to 24-28. At an applied electric field of 250 kV/cm, the 3% Mn-doped BST films exhibited leakage current densities below 2x10(-8) A/cm(2) compared to the much higher value of 5x10(-4) A/cm(2) characteristic of undoped BST films. Pentacene based OTFTs using 3% Mn-doped BST gate dielectrics exhibited low voltage operation of < 10 V. This demonstrates the potential use of Mn-doped BST films as high-K gate dielectrics for stable and low operating voltage OTFTs.
Publisher
AMER INST PHYSICS
Issue Date
2005-12
Language
English
Article Type
Article
Keywords

STATE

Citation

APPLIED PHYSICS LETTERS, v.87, pp.2311 - 2330

ISSN
0003-6951
DOI
10.1063/1.2139838
URI
http://hdl.handle.net/10203/92546
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 50 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0