Ferroelectric properties of Bi(4-x)Ce(x)Ti(3)O(12) (0 < x < 4) thin film array fabricated from Bi(2)O(3)/CeO(2)/TiO(2) multilayers using multitarget sputtering

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We fabricated a ferroelectric Bi(4-x)Ce(x)Ti(3)O(12) thin film library by solid-state mixing of Bi(2)O(3)/CeO(2)/TiO(2) multilayers using a multitarget rf magnetron sputtering equipped with an automated shutter. Polarization-electrical field and the structure are mapped as a function of Ce content (x) from 0 to 4. The remnant polarization decreases as Ce content increases, and at x >= 0.8, Bi(4-x)Ce(x)Ti(3)O(12) samples exhibit a paraelectric property due to the formation of impurity phases such as Bi(2)Ti(2)O(7) and CeO(2). Among the thin film samples of the library, Bi(3.85)Ce(0.15)Ti(3)O(12) exhibited the largest remnant polarization of 13.0 mu C/cm(2). (C) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-02
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; BISMUTH TITANATE; COMBINATORIAL ELECTROCHEMISTRY; POLARIZATION; MEMORIES; DISCOVERY; LIBRARIES

Citation

APPLIED PHYSICS LETTERS, v.92, no.5

ISSN
0003-6951
DOI
10.1063/1.2841039
URI
http://hdl.handle.net/10203/91646
Appears in Collection
CBE-Journal Papers(저널논문)
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