DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JS | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.contributor.author | Kim, H | ko |
dc.date.accessioned | 2013-03-07T09:59:47Z | - |
dc.date.available | 2013-03-07T09:59:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.3, pp.1327 - 1332 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89928 | - |
dc.description.abstract | Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.] (c) 2006 American Vacuum Society. | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | SILICON-NITRIDE FILMS | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | COPPER | - |
dc.title | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films | - |
dc.type | Article | - |
dc.identifier.wosid | 000238790000042 | - |
dc.identifier.scopusid | 2-s2.0-33744931887 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 1327 | - |
dc.citation.endingpage | 1332 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.2198846 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Park, JS | - |
dc.contributor.nonIdAuthor | Kim, H | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON-NITRIDE FILMS | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | COPPER | - |
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