Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

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Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.
Publisher
AMER INST PHYSICS
Issue Date
2007-01
Language
English
Article Type
Article
Keywords

QUANTUM-DOT; ROOM-TEMPERATURE; COULOMB-BLOCKADE; FABRICATION; TRANSISTORS; MICROSCOPE; MEMORY; SYSTEM; FIELD

Citation

APPLIED PHYSICS LETTERS, v.90, no.5, pp.153 - 157

ISSN
0003-6951
DOI
10.1063/1.2450650
URI
http://hdl.handle.net/10203/89899
Appears in Collection
MS-Journal Papers(저널논문)
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