Thermal stability of the present CoCrPt-SiO(2) media becomes a more critical issue as recording density steadily increases. In the present study, thermal stability of the stacked media composed of high K(u) CoPt-TiO(2) and normal K(u) CoCrPt-SiO(2) was studied by changing stacking order and thickness of each layer while keeping a constant total thickness. When the CoPt-TiO(2) layer was placed under the CoCrPt-SiO(2) layer, negative nucleation field and coercivity increased much more than those of the reverse stacking case. Thermal stability of the CoPt-TiO(2) bottom group was superior to that of the CoCrPt-SiO(2) bottom group when measured by a spin stand.