Microstructure and ferroelectric properties of (Bi,Nd)(4)Ti3O12 thin films fabricated by a sol-gel process

Abstract

We report on the ferroelectric properties of Bi-3.54 Nd-0.46 Ti3O12 (BNT) thin films fabricated on Pt(111)/Ti/SiO2/Si substrates by a sol-gel process. The measured XRD patterns and SEM and TEM micrographs revealed that the films showed only a Bi4Ti3O12 -type phase with random orientations. The Au/BNT/Pt capacitors showed excellent ferroelectric properties. For the film capacitor annealed at 700 degrees C, the remanent polarization (2P(r)) and the coercive field (2E(c)) were 67 mu C/cm(2) and 183 kV/cm at applied electric field of 300 kV/cm, respectively. Furthermore, the Au/BNT/Pt capacitor did not show any significant fatigue up to 1.5 x 10(10) read/write switching cycles at a frequency of 1 MHz.