In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

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The stoichiometry of SiOx layers in SiOx/SiO2 Superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x approximate to 1.6 and x approximate to 1.2 for the bulk-SiO, films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs. (c) 2004 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2005-05
Language
English
Article Type
Article
Keywords

SILICON NANOCRYSTALS; THIN-FILMS; EVAPORATION

Citation

THIN SOLID FILMS, v.478, pp.21 - 24

ISSN
0040-6090
DOI
10.1016/j.tsf.2004.09.044
URI
http://hdl.handle.net/10203/88934
Appears in Collection
NT-Journal Papers(저널논문)
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