In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

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dc.contributor.authorKim, KJko
dc.contributor.authorMoon, DWko
dc.contributor.authorHong, SHko
dc.contributor.authorChoi, SHko
dc.contributor.authorYang, MSko
dc.contributor.authorJhe, JHko
dc.contributor.authorShin, JungHoonko
dc.date.accessioned2013-03-07T00:25:06Z-
dc.date.available2013-03-07T00:25:06Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-05-
dc.identifier.citationTHIN SOLID FILMS, v.478, pp.21 - 24-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/10203/88934-
dc.description.abstractThe stoichiometry of SiOx layers in SiOx/SiO2 Superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x approximate to 1.6 and x approximate to 1.2 for the bulk-SiO, films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs. (c) 2004 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectTHIN-FILMS-
dc.subjectEVAPORATION-
dc.titleIn situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property-
dc.typeArticle-
dc.identifier.wosid000228039800004-
dc.identifier.scopusid2-s2.0-14544292377-
dc.type.rimsART-
dc.citation.volume478-
dc.citation.beginningpage21-
dc.citation.endingpage24-
dc.citation.publicationnameTHIN SOLID FILMS-
dc.identifier.doi10.1016/j.tsf.2004.09.044-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorKim, KJ-
dc.contributor.nonIdAuthorMoon, DW-
dc.contributor.nonIdAuthorHong, SH-
dc.contributor.nonIdAuthorChoi, SH-
dc.contributor.nonIdAuthorYang, MS-
dc.contributor.nonIdAuthorJhe, JH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthormultilayer-
dc.subject.keywordAuthornanostructure-
dc.subject.keywordAuthorsilicon oxide-
dc.subject.keywordAuthorX-ray photoelectron spectroscopy-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusEVAPORATION-
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