DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, KJ | ko |
dc.contributor.author | Moon, DW | ko |
dc.contributor.author | Hong, SH | ko |
dc.contributor.author | Choi, SH | ko |
dc.contributor.author | Yang, MS | ko |
dc.contributor.author | Jhe, JH | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-07T00:25:06Z | - |
dc.date.available | 2013-03-07T00:25:06Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-05 | - |
dc.identifier.citation | THIN SOLID FILMS, v.478, pp.21 - 24 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88934 | - |
dc.description.abstract | The stoichiometry of SiOx layers in SiOx/SiO2 Superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x approximate to 1.6 and x approximate to 1.2 for the bulk-SiO, films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs. (c) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | SILICON NANOCRYSTALS | - |
dc.subject | THIN-FILMS | - |
dc.subject | EVAPORATION | - |
dc.title | In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property | - |
dc.type | Article | - |
dc.identifier.wosid | 000228039800004 | - |
dc.identifier.scopusid | 2-s2.0-14544292377 | - |
dc.type.rims | ART | - |
dc.citation.volume | 478 | - |
dc.citation.beginningpage | 21 | - |
dc.citation.endingpage | 24 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/j.tsf.2004.09.044 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Kim, KJ | - |
dc.contributor.nonIdAuthor | Moon, DW | - |
dc.contributor.nonIdAuthor | Hong, SH | - |
dc.contributor.nonIdAuthor | Choi, SH | - |
dc.contributor.nonIdAuthor | Yang, MS | - |
dc.contributor.nonIdAuthor | Jhe, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | multilayer | - |
dc.subject.keywordAuthor | nanostructure | - |
dc.subject.keywordAuthor | silicon oxide | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | EVAPORATION | - |
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