High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

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We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I-ph/I-dark) in BPTT OPTs were 82 A/W and 2.0x10(5) under 380 nm UV light with 1.55 mW/cm(2), respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations. (C) 2005 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2005-01
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; ELECTRON-MOBILITY TRANSISTORS; FILMS

Citation

APPLIED PHYSICS LETTERS, v.86, no.4

ISSN
0003-6951
DOI
10.1063/1.1856144
URI
http://hdl.handle.net/10203/88835
Appears in Collection
CH-Journal Papers(저널논문)
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