High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

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dc.contributor.authorNoh, YYko
dc.contributor.authorKim, DYko
dc.contributor.authorYoshida, Yko
dc.contributor.authorYase, Kko
dc.contributor.authorJung, BJko
dc.contributor.authorLim, Eko
dc.contributor.authorShim, Hong Kuko
dc.date.accessioned2013-03-06T23:37:20Z-
dc.date.available2013-03-06T23:37:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.86, no.4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/88835-
dc.description.abstractWe report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I-ph/I-dark) in BPTT OPTs were 82 A/W and 2.0x10(5) under 380 nm UV light with 1.55 mW/cm(2), respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations. (C) 2005 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectELECTRON-MOBILITY TRANSISTORS-
dc.subjectFILMS-
dc.titleHigh-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer-
dc.typeArticle-
dc.identifier.wosid000226761400069-
dc.identifier.scopusid2-s2.0-13644276620-
dc.type.rimsART-
dc.citation.volume86-
dc.citation.issue4-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1856144-
dc.contributor.localauthorShim, Hong Ku-
dc.contributor.nonIdAuthorNoh, YY-
dc.contributor.nonIdAuthorKim, DY-
dc.contributor.nonIdAuthorYoshida, Y-
dc.contributor.nonIdAuthorYase, K-
dc.contributor.nonIdAuthorJung, BJ-
dc.contributor.nonIdAuthorLim, E-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusELECTRON-MOBILITY TRANSISTORS-
dc.subject.keywordPlusFILMS-
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