DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, B | ko |
dc.contributor.author | Kim, HC | ko |
dc.contributor.author | Kang, SG | ko |
dc.contributor.author | Kim, YH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Park, CY | ko |
dc.date.accessioned | 2013-03-06T22:35:33Z | - |
dc.date.available | 2013-03-06T22:35:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-11 | - |
dc.identifier.citation | CHEMISTRY OF MATERIALS, v.17, pp.5398 - 5403 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88707 | - |
dc.description.abstract | Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the (DX)-X-0 line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal T-4(1) -> (6)A(1) transition of Mn2+ (3d(5)), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition T-4(2) -> defect state. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | GALLIUM NITRIDE NANOWIRES | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | P-TYPE GAN | - |
dc.subject | FERROMAGNETIC PROPERTIES | - |
dc.subject | MAGNETIC SEMICONDUCTOR | - |
dc.subject | SPIN INJECTION | - |
dc.subject | TEMPERATURE | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | GROWTH | - |
dc.subject | MN | - |
dc.title | Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000232899700003 | - |
dc.identifier.scopusid | 2-s2.0-27744448568 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.beginningpage | 5398 | - |
dc.citation.endingpage | 5403 | - |
dc.citation.publicationname | CHEMISTRY OF MATERIALS | - |
dc.identifier.doi | 10.1021/cm050557j | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Ha, B | - |
dc.contributor.nonIdAuthor | Kim, HC | - |
dc.contributor.nonIdAuthor | Kang, SG | - |
dc.contributor.nonIdAuthor | Kim, YH | - |
dc.contributor.nonIdAuthor | Park, CY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | FERROMAGNETIC PROPERTIES | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTOR | - |
dc.subject.keywordPlus | SPIN INJECTION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MN | - |
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