DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang M.S. | ko |
dc.contributor.author | Yang C.S. | ko |
dc.contributor.author | Choi C.K. | ko |
dc.contributor.author | Jung W.B. | ko |
dc.date.accessioned | 2013-03-06T19:22:09Z | - |
dc.date.available | 2013-03-06T19:22:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1702 - 1707 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88139 | - |
dc.description.abstract | Carbon-doped silicon-oxide films with a low dielectric constant were deposited on p-type Si(100) substrates by using ultraviolet source-assisted plasma-enhanced chemical-vapor deposition with a methyltrimethoxysilane (MTMS:CH3Si(OCH3)(3)) precursor and oxygen gases. The deposition rate of the SiOC(-H) film with ultraviolet irradiation was 10 to 15 % higher than it was without ultraviolet irradiation. The lowest dielectric constant observed was 2.3 +/- 0.11 for a flow rate ratio of 100 % with ultraviolet irradiation. When the bulk plasma is illuminated with ultraviolet light, the carbon ions and other radicals are increased, and some of the Si-O-C open-linked bonds change into cage-linked bonds in which C atoms are incorporated in the Si-O-C bonding structure. The UV illumination of the bulk plasma with the precursor + O-2 + He mixture caused a dissociation of ions that are more reactive and an increase in the number of radicals, such as Si-*, -CH3*, CHn+, O-2(*), O-2(-), etc. The large increase in the number of radicals is due to inelastic scattering of electrons with excited precursors. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | LOW-DIELECTRIC-CONSTANT | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.title | A study on the plasma parameters and characteristics of carbon-doped silicon-oxide films by using MTMS/O-2 and He plasmas | - |
dc.type | Article | - |
dc.identifier.wosid | 000238324000111 | - |
dc.identifier.scopusid | 2-s2.0-33746093488 | - |
dc.type.rims | ART | - |
dc.citation.volume | 48 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1702 | - |
dc.citation.endingpage | 1707 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Jung W.B. | - |
dc.contributor.nonIdAuthor | Kang M.S. | - |
dc.contributor.nonIdAuthor | Yang C.S. | - |
dc.contributor.nonIdAuthor | Choi C.K. | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | UV-assisted PECVD | - |
dc.subject.keywordAuthor | plasma | - |
dc.subject.keywordAuthor | EEPFs | - |
dc.subject.keywordAuthor | dielectric constant | - |
dc.subject.keywordPlus | LOW-DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
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