DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한석규 | ko |
dc.contributor.author | 홍순구 | ko |
dc.contributor.author | 이정용 | ko |
dc.contributor.author | 이재욱 | ko |
dc.date.accessioned | 2013-03-06T15:50:43Z | - |
dc.date.available | 2013-03-06T15:50:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-10 | - |
dc.identifier.citation | 전기전자재료학회논문지, v.19, no.10, pp.923 - 929 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87489 | - |
dc.language | Korean | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가 | - |
dc.title.alternative | Growth and Characterization of ZnO Thin Films on R-plane SapphireSubstrates by Plasma Assisted Molecular Beam Epitaxy | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 923 | - |
dc.citation.endingpage | 929 | - |
dc.citation.publicationname | 전기전자재료학회논문지 | - |
dc.identifier.kciid | ART001089454 | - |
dc.contributor.localauthor | 이정용 | - |
dc.contributor.nonIdAuthor | 한석규 | - |
dc.contributor.nonIdAuthor | 홍순구 | - |
dc.contributor.nonIdAuthor | 이재욱 | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | MBE | - |
dc.subject.keywordAuthor | R-plane Al2O3 | - |
dc.subject.keywordAuthor | Nonpolar substrate | - |
dc.subject.keywordAuthor | Polarization | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | MBE | - |
dc.subject.keywordAuthor | R-plane Al2O3 | - |
dc.subject.keywordAuthor | Nonpolar substrate | - |
dc.subject.keywordAuthor | Polarization | - |
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