Transparent ZnO-TFT arrays fabricated by atomic layer deposition

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dc.contributor.authorKo Park, Sang-Heeko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorJeong, Hu Youngko
dc.contributor.authorChu, Hye Yongko
dc.contributor.authorCho, Kyoung Ikko
dc.date.accessioned2013-03-06T13:44:48Z-
dc.date.available2013-03-06T13:44:48Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.1, pp.H10 - H14-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/87146-
dc.description.abstractTransparent ZnO thin film transistor (TFT) array of 176 x 144 (106 dpi) was fabricated on glass substrate. The V-th of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm(2)/V s. The active layer (ZnO), gate insulator (Al2O3), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode. (C) 2007 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherElectrochemical Soc Inc-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectROOM-TEMPERATURE-
dc.subjectZINC-OXIDE-
dc.subjectELECTRONICS-
dc.subjectCHANNEL-
dc.titleTransparent ZnO-TFT arrays fabricated by atomic layer deposition-
dc.typeArticle-
dc.identifier.wosid000250983500018-
dc.identifier.scopusid2-s2.0-36248989247-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue1-
dc.citation.beginningpageH10-
dc.citation.endingpageH14-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.2801017-
dc.contributor.localauthorKo Park, Sang-Hee-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorChu, Hye Yong-
dc.contributor.nonIdAuthorCho, Kyoung Ik-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusZINC-OXIDE-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusCHANNEL-
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