DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, JY | ko |
dc.contributor.author | Lim, WC | ko |
dc.contributor.author | Kim, HJ | ko |
dc.contributor.author | Lee, Taek Dong | ko |
dc.contributor.author | Kim, KW | ko |
dc.contributor.author | Kim, TW | ko |
dc.date.accessioned | 2013-03-06T13:15:40Z | - |
dc.date.available | 2013-03-06T13:15:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.99, no.8 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87077 | - |
dc.description.abstract | Recent experiments have demonstrated high tunneling magnetoresistance (TMR) ratios in magnetic tunnel junctions (MTJs) with the MgO barrier. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. X-ray photoelectron spectroscopy depth profiles were utilized for the as-deposited and 340 degrees C annealed specimens. Transmission electron microscope analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions and CoFeB was crystallized in the annealed junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization. The B behavior will be discussed. (C) 2006 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | MAGNETORESISTANCE | - |
dc.title | Compositional change of MgO barrier and interface in CoFeB/MgO/CoFeB tunnel junction after annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000237404200817 | - |
dc.identifier.scopusid | 2-s2.0-33646748374 | - |
dc.type.rims | ART | - |
dc.citation.volume | 99 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.2170591 | - |
dc.contributor.localauthor | Lee, Taek Dong | - |
dc.contributor.nonIdAuthor | Bae, JY | - |
dc.contributor.nonIdAuthor | Lim, WC | - |
dc.contributor.nonIdAuthor | Kim, HJ | - |
dc.contributor.nonIdAuthor | Kim, KW | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
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