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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method

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dc.contributor.authorKim, SYko
dc.contributor.authorLee, HSko
dc.contributor.authorChung, ISko
dc.contributor.authorPark, YJko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, TWko
dc.date.accessioned2013-03-06T10:15:56Z-
dc.date.available2013-03-06T10:15:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-02-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.253, no.8, pp.4041 - 4044-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/86661-
dc.description.abstractTi/Ge2Sb2Te5/Ti thin films deposited by a sputtering method on SiO2/Si substrates were annealed at 400 degrees C in N-2 atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/ Ge2Sb2Te5/Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge2Sb2Te5 layers was unstable and Ti atoms were incorporated into the Ge2Sb2Te5 thin film upon annealing. The Te and Sb atoms of the Ge2Sb2Te5 layer diffused into the Ti layer. The intermixing layers between the Ge2Sb2Te5 layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge2Sb2Te5/Ti systems can be degraded by the postgrowth thermal annealing. (c) 2006 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectPHASE-CHANGE MEMORY-
dc.subjectGE2SB2TE5 FILMS-
dc.subjectCRYSTALLIZATION-
dc.subjectNUCLEATION-
dc.subjectMECHANISM-
dc.titleEffect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method-
dc.typeArticle-
dc.identifier.wosid000244656600052-
dc.identifier.scopusid2-s2.0-33846587452-
dc.type.rimsART-
dc.citation.volume253-
dc.citation.issue8-
dc.citation.beginningpage4041-
dc.citation.endingpage4044-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.identifier.doi10.1016/j.apsusc.2006.08.038-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, SY-
dc.contributor.nonIdAuthorLee, HS-
dc.contributor.nonIdAuthorChung, IS-
dc.contributor.nonIdAuthorPark, YJ-
dc.contributor.nonIdAuthorKim, TW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGe2Sb2Te5-
dc.subject.keywordAuthordiffusion-
dc.subject.keywordAuthortransmission electron microscopy-
dc.subject.keywordPlusPHASE-CHANGE MEMORY-
dc.subject.keywordPlusGE2SB2TE5 FILMS-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusNUCLEATION-
dc.subject.keywordPlusMECHANISM-
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