Adsorption geometry of furan on Si(100)-2 x 1

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dc.contributor.authorLee H.-K.ko
dc.contributor.authorKim K.-j.ko
dc.contributor.authorKang T.-H.ko
dc.contributor.authorChung J.W.ko
dc.contributor.authorKim B.ko
dc.date.accessioned2013-03-06T08:17:58Z-
dc.date.available2013-03-06T08:17:58Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-
dc.identifier.citationSURFACE SCIENCE, v.602, no.4, pp.914 - 918-
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10203/86416-
dc.description.abstractWe have investigated adsorption of furan on Si(100) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, O 1s spectra of furan on Si(100) show that furan is chemisorbed on Si(100)-2 x 1 through [4 + 2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of furan on Si(100). Since the pi(*) orbital of C = C bond showed a good angle dependence in carbon K-edge NEXAFS spectra, the angle 28 +/- 2 degrees determined from NEXAFS spectra appears to deviate from a theoretical value of 19 degrees for the [4 + 2] cycloaddition by 9 degrees, mostly due to the intrinsic defects on the Si(100)-2 x 1 substrate surface. (C) 2007 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectPHOTOELECTRON-SPECTROSCOPY-
dc.subjectTEMPERATURE-
dc.subjectMOLECULES-
dc.subjectBEAMLINE-
dc.subjectSURFACE-
dc.subjectFILMS-
dc.titleAdsorption geometry of furan on Si(100)-2 x 1-
dc.typeArticle-
dc.identifier.wosid000253930700014-
dc.identifier.scopusid2-s2.0-39149140369-
dc.type.rimsART-
dc.citation.volume602-
dc.citation.issue4-
dc.citation.beginningpage914-
dc.citation.endingpage918-
dc.citation.publicationnameSURFACE SCIENCE-
dc.identifier.doi10.1016/j.susc.2007.12.019-
dc.contributor.localauthorKim K.-j.-
dc.contributor.nonIdAuthorLee H.-K.-
dc.contributor.nonIdAuthorKang T.-H.-
dc.contributor.nonIdAuthorChung J.W.-
dc.contributor.nonIdAuthorKim B.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorfuran-
dc.subject.keywordAuthorSi(100)-
dc.subject.keywordAuthoradsorption-
dc.subject.keywordAuthorPES-
dc.subject.keywordAuthorNEXAFS-
dc.subject.keywordAuthormolecular orientation-
dc.subject.keywordAuthororganic-semiconductor interface-
dc.subject.keywordPlusPHOTOELECTRON-SPECTROSCOPY-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusMOLECULES-
dc.subject.keywordPlusBEAMLINE-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusFILMS-
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