DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, W.-J. | ko |
dc.contributor.author | Chun, M.-H. | ko |
dc.contributor.author | Cheong, K.-S. | ko |
dc.contributor.author | Park, K.-C. | ko |
dc.contributor.author | Park, Chong-Ook | ko |
dc.contributor.author | Cao, G. | ko |
dc.contributor.author | Rha, S.-K. | ko |
dc.date.accessioned | 2013-03-06T08:16:33Z | - |
dc.date.available | 2013-03-06T08:16:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | DIFFUSION AND DEFECT DATA PT.B: SOLID STATE PHENOMENA, v.124-126, no.PART 1, pp.247 - 250 | - |
dc.identifier.issn | 1012-0394 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86414 | - |
dc.description.abstract | SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350-400°C using alternating exposures of SiH2Cl2 and O3/O 2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400°C exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films. | - |
dc.language | English | - |
dc.publisher | Trans Tech Publications | - |
dc.title | Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-38549085882 | - |
dc.type.rims | ART | - |
dc.citation.volume | 124-126 | - |
dc.citation.issue | PART 1 | - |
dc.citation.beginningpage | 247 | - |
dc.citation.endingpage | 250 | - |
dc.citation.publicationname | DIFFUSION AND DEFECT DATA PT.B: SOLID STATE PHENOMENA | - |
dc.contributor.localauthor | Park, Chong-Ook | - |
dc.contributor.nonIdAuthor | Lee, W.-J. | - |
dc.contributor.nonIdAuthor | Chun, M.-H. | - |
dc.contributor.nonIdAuthor | Cheong, K.-S. | - |
dc.contributor.nonIdAuthor | Park, K.-C. | - |
dc.contributor.nonIdAuthor | Cao, G. | - |
dc.contributor.nonIdAuthor | Rha, S.-K. | - |
dc.subject.keywordAuthor | Atomic layer deposition (ALD) | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.