New n-type TiO2 transparent active channel TFTs fabricated with a solution process

Abstract

New metal-oxide thin-film transistors (MOxTFTs) with a solution-processed TiO(2) transparent active channel are fabricated with a novel doping process that consists of a deposition of an ultrathin Ti layer on TiO(2) films and a brief rapid thermal annealing. Contrary to an as-prepared device which does not show any appreciable TFT actions, devices with the proposed process exhibit a clear n-type TFT behavior with a saturation mobility of 0.12 cm(2) . V(-1) . s(-1) and a threshold voltage of 11 V. A solution processibility and a low-cost manufacturability of TiO(2) make the presented TFTs potentially attractive for cost-sensitive applications.