DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JW | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.date.accessioned | 2013-03-06T07:22:13Z | - |
dc.date.available | 2013-03-06T07:22:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.724 - 727 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86261 | - |
dc.description.abstract | New metal-oxide thin-film transistors (MOxTFTs) with a solution-processed TiO(2) transparent active channel are fabricated with a novel doping process that consists of a deposition of an ultrathin Ti layer on TiO(2) films and a brief rapid thermal annealing. Contrary to an as-prepared device which does not show any appreciable TFT actions, devices with the proposed process exhibit a clear n-type TFT behavior with a saturation mobility of 0.12 cm(2) . V(-1) . s(-1) and a threshold voltage of 11 V. A solution processibility and a low-cost manufacturability of TiO(2) make the presented TFTs potentially attractive for cost-sensitive applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.title | New n-type TiO2 transparent active channel TFTs fabricated with a solution process | - |
dc.type | Article | - |
dc.identifier.wosid | 000257626000022 | - |
dc.identifier.scopusid | 2-s2.0-47249131710 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 724 | - |
dc.citation.endingpage | 727 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2008.2000608 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.nonIdAuthor | Park, JW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | dielectric films | - |
dc.subject.keywordAuthor | field-effect transistors (FETs) | - |
dc.subject.keywordAuthor | metal-oxide-semiconductors | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | titanium dioxide (TiO(2)) | - |
dc.subject.keywordAuthor | transparent TFTs | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
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