A low-voltage and low-power RF MEMS series, and shunt switches actuated by combination of electromagnetic and electrostatic forces

Abstract

This paper reports new RF microelectromechanical systems (MEMS) switches actuated by the combination of electromagnetic and electrostatic forces for low-voltage and low-power operation. The proposed RF MEMS switches have utilized the proper combination of two actuation mechanisms: taking advantage of the large actuation force from electromagnetic actuation for initial movement and the low-power feature from electrostatic actuation for holding the actuator position. Both series- and shunt-type switches have been implemented using the proposed actuation mechanism. From the fabricated switches, feasibility of operation has been successfully demonstrated. The fabricated switches can be operated within several hundred microseconds. In the series-type switch, the isolation has been measured as -34 dB and insertion loss as -0.37 dB at 20 GHz. In the shunt type switch, the isolation is - 20.7 dB and insertion loss is - 0.85 dB at 19.5 GHz. The proposed RF MEMS switches are mechanically robust and the combination of electromagnetic and electrostatic actuations makes it possible to achieve excellent switching characteristics at low power and low voltage below 5 V.