Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition

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Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750-950 degreesC. As the growth temperature increases from 750 degreesC to 950 degreesC, the growth rate increases by four times and the average diameter also increases from 30 mn to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950 degreesC. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2001-07
Language
English
Article Type
Article
Keywords

EMISSION; ARRAYS; DECOMPOSITION; NUCLEATION; DIAMETER; ROPES; MODEL

Citation

CHEMICAL PHYSICS LETTERS, v.343, no.1-2, pp.33 - 38

ISSN
0009-2614
URI
http://hdl.handle.net/10203/85846
Appears in Collection
MS-Journal Papers(저널논문)
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