DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, HK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Choi, SC | ko |
dc.contributor.author | Yang, GM | ko |
dc.date.accessioned | 2013-03-06T04:47:02Z | - |
dc.date.available | 2013-03-06T04:47:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-01 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85841 | - |
dc.description.abstract | We have investigated the growth of crack-free AlxGa1-xN layer (0.133 greater than or equal to x > 0.1) with low dislocation density using AlxGa1-xN/GaN heterostructure. From the wet-etched surfaces and transmission electron microscopy (TEM) images, the 2 mum underlying AlxGa1-xN layer with low AIN molar fraction is effective in preventing the formation of cracks in AlxGa1-xN surface. Although the number of defects in the underlying AlxGa1-xN layer grown on low-temperature GaN buffer are increased by the increase of AIN molar fraction, the use of the highly strained AlxGa1-xN/GaN/AlxGa1-xN heterostructure on the underlying layer is effective in reducing the number of defects near the surface. The possibility of the growth of crack-free AlxGa1-xN/GaN heterostructure with low dislocation density by controlling the AIN molar fraction and the misfit strain value is presented. (C) 2001 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SAPPHIRE SUBSTRATE | - |
dc.subject | BUFFER LAYER | - |
dc.subject | GAN | - |
dc.subject | ALGAN | - |
dc.subject | STRESS | - |
dc.subject | FILMS | - |
dc.title | Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density | - |
dc.type | Article | - |
dc.identifier.wosid | 000166502600015 | - |
dc.identifier.scopusid | 2-s2.0-0035147976 | - |
dc.type.rims | ART | - |
dc.citation.volume | 222 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 104 | - |
dc.citation.endingpage | 109 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Cho, HK | - |
dc.contributor.nonIdAuthor | Choi, SC | - |
dc.contributor.nonIdAuthor | Yang, GM | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | AlxGa1-xN | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | crack | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | threading dislocation | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordPlus | SAPPHIRE SUBSTRATE | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | ALGAN | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | FILMS | - |
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