DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, DC | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, IS | ko |
dc.contributor.author | Kim, YT | ko |
dc.date.accessioned | 2013-03-06T04:44:54Z | - |
dc.date.available | 2013-03-06T04:44:54Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | THIN SOLID FILMS, v.416, no.1-2, pp.62 - 65 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85837 | - |
dc.description.abstract | The microstructure of the sputtered-YMnO3, thin films on Si (100) substrates was controlled by only using thermal treatment processes and YMnO3 thin films having a well-defined bi-layered microstructure were fabricated. These YMnO3 thin films have two distinct layers, i.e. approximately 40 nm-thick top layer of {00l}-oriented YMnO3, and approximately 60 nm-thick bottom layer of polycrystalline YMnO3 in the 100 rim-thick film. The abrupt change of the crystalline orientation from the {00l}-preferred orientation to the random orientation is mainly due to a high stress induced by die {00l}-oriented YMnO3 layer, which was confirmed by a full width at half-maximum in Si (004) rocking curves. The controlled c-axis/polycrystalline YMnO3 thin films showed a better memory window and low leakage current density than purely c-axis-oriented YMnO3 thin film and the purely polycrystalline YMnO3 thin film. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | NONVOLATILE MEMORY DEVICES | - |
dc.subject | FERROELECTRIC PROPERTIES | - |
dc.subject | DEPOSITION | - |
dc.subject | CANDIDATE | - |
dc.subject | GROWTH | - |
dc.title | Microstructure control of YMnO3 thin films on Si (100) substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000178582700010 | - |
dc.identifier.scopusid | 2-s2.0-0037009692 | - |
dc.type.rims | ART | - |
dc.citation.volume | 416 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 62 | - |
dc.citation.endingpage | 65 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Yoo, DC | - |
dc.contributor.nonIdAuthor | Kim, IS | - |
dc.contributor.nonIdAuthor | Kim, YT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | transmission electron microscopy (TEM) | - |
dc.subject.keywordAuthor | yttrium compound | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY DEVICES | - |
dc.subject.keywordPlus | FERROELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | CANDIDATE | - |
dc.subject.keywordPlus | GROWTH | - |
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