GaAs (001) 기판위에 분자선 에피텍시 방법으로 성장시킨 CdxZn1-x Te 에피층에서의 CuPt형 규칙상에 대한 고찰CuPt-type ordering in CdxZn1-xTe Epitaxial Layers Grown on GaAs (001) Substrates by Molecular Beam Epitaxy
We have studied an atomic ordering and ordered domains in CdxZn1-xTe epilayers grown by molecular
beam epitaxy on ZnTe buffer layers. The composition of CdxZn1-xTe thin films was determined by X-ray diffraction
patterns using the Vegard’s law. Selected area electron diffraction pattern and high-resolution transmission electron
microscopy measurements were performed in order to investigate the ordered structure and ordered domains in
CdxZn1-xTe thin films. The strong contrast modulations along the [001] direction parallel to the growth direction were
observed in samples with composition x = 0.15~0.76. A superstructure reflection spots corresponding to a CuPt-type
ordering were observed. Ordered domain regions were randomly distributed in CdxZn1-xTe thin films. A possible
atomic arrangement of and a formation mechanism for the CuPt-type ordered structure in the CdxZn1-xTe epitaxial
layer are presented based on the TEM results. These results provide important information on the microstructural
properties for enhancing efficiencies of the devices operating at the blue-green region of the spectrum.