Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells

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dc.contributor.authorKim, TWko
dc.contributor.authorLee, DUko
dc.contributor.authorLee, HSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, MDko
dc.date.accessioned2013-03-06T04:25:15Z-
dc.date.available2013-03-06T04:25:15Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-02-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.89, no.4, pp.2503 - 2505-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/85790-
dc.description.abstractSelected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells (MQWs). The SADP showed two sets of extra spots with asymmetrical intensity, and the high-resolution TEM image showed doublet periodicity in the contrast of the (001) lattice planes. The results of the SADP and the TEM measurements showed that a CuAu-I-type ordered structure was observed near the lattice-mismatched InxGa1-xAs/InyAl1-yAs heterointerfaces. This CuAu-I-type ordered structure had an antiphase boundary in the periodically regular InxGa1-xAs/InyAl1-yAs lattice-mismatched region. The existence of a CuAu-I-type ordered structure in InxGa1-xAs/InyAl1-yAs MQWs might originate from the lattice mismatch between the InxGa1-xAs and the InyAl1-yAs layers. These results provide important information on the microstructural properties for improving operating efficiencies in long-wavelength optoelectronic devices, such as strain compensated electroabsorption modulators utilizing lattice-mismatched InxGa1-xAs/InyAl1-yAs MQWs. (C) 2001 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectLONG-RANGE ORDER-
dc.subjectSTEP STRUCTURE-
dc.subjectHETEROSTRUCTURES-
dc.subjectMODULATION-
dc.subjectALLOYS-
dc.subjectLAYERS-
dc.subjectGAINP-
dc.titleExistence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells-
dc.typeArticle-
dc.identifier.wosid000166688300076-
dc.identifier.scopusid2-s2.0-0038493890-
dc.type.rimsART-
dc.citation.volume89-
dc.citation.issue4-
dc.citation.beginningpage2503-
dc.citation.endingpage2505-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorLee, DU-
dc.contributor.nonIdAuthorLee, HS-
dc.contributor.nonIdAuthorKim, MD-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLONG-RANGE ORDER-
dc.subject.keywordPlusSTEP STRUCTURE-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusMODULATION-
dc.subject.keywordPlusALLOYS-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusGAINP-
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