DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, SR | ko |
dc.contributor.author | Jo, MS | ko |
dc.contributor.author | Humg, TV | ko |
dc.contributor.author | Yang, GM | ko |
dc.contributor.author | Cho, HK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Hwang, SW | ko |
dc.contributor.author | Son, SJ | ko |
dc.date.accessioned | 2013-03-06T04:12:36Z | - |
dc.date.available | 2013-03-06T04:12:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-11 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85768 | - |
dc.description.abstract | We have investigated the characteristics of InGaN/GaN blue, light-emitting diodes (LEDs) with a Si delta -doped GaN contact layer. The Si delta -doping of the GaN contact layer in the devices could enhance the Si doping concentration and improve the lateral conductivity in the GaN:Si contact layer without cracking. The operating voltage and dynamic resistance of LEDs with a Si delta -doped GaN contact layer were 3.65 V and 27 Ohm at 20 mA, respectively. The operating voltage, and dynamic resistance of conventional LEDs with a uniformly doped GaN:Si contact layer were 3.94 V and 32.3 Ohm at 20 mA, respectively. Also, the leakage currents at a reverse bias of - 10 V were 2.8 muA for delta -doped LEDs and 29 muA for uniformly doped LEDs. However emission properties such as electroluminescence spectra and output power were not largely affected by utilizing a delta -doped GaN:Si contact layer in the devices. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | SAPPHIRE SUBSTRATE | - |
dc.subject | GROWTH | - |
dc.subject | MOVPE | - |
dc.title | Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000172686900033 | - |
dc.identifier.scopusid | 2-s2.0-1942521250 | - |
dc.type.rims | ART | - |
dc.citation.volume | 188 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 163 | - |
dc.citation.endingpage | 166 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Jeon, SR | - |
dc.contributor.nonIdAuthor | Jo, MS | - |
dc.contributor.nonIdAuthor | Humg, TV | - |
dc.contributor.nonIdAuthor | Yang, GM | - |
dc.contributor.nonIdAuthor | Cho, HK | - |
dc.contributor.nonIdAuthor | Hwang, SW | - |
dc.contributor.nonIdAuthor | Son, SJ | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | SAPPHIRE SUBSTRATE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MOVPE | - |
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