Characterization of LSCO/Ir and LSCO/Ru structure as diffusion barrier layers for highly integrated memory devices

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dc.contributor.authorKim, Il-Dooko
dc.contributor.authorHan, KYko
dc.contributor.authorKim, Ho Giko
dc.date.accessioned2013-03-06T04:12:20Z-
dc.date.available2013-03-06T04:12:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-02-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.2, pp.11 - 14-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/85767-
dc.description.abstractThe integration of ferroelectric capacitors into memory cells requires the bottom electrode material to be placed directly over a contact plug. LaSrCoO3 (LSCO) thin film was deposited using dc magnetron sputter-deposition as an electrode material and a diffusion barrier layer for Pb(Zr,Ti)O-3 (PZT) thin-film capacitors. The thermal stability and barrier property of LSCO/Ir/poly-Si and LSCO/Ru/poly-Si contact layers for oxygen diffusion were investigated by Auger electron spectroscopy to find a structure suitable for the bottom electrode of integrated ferroelectric capacitors. The LSCO/Ir/poly-Si composite stack showed lower resistivity compared to LSCO/Ru/poly-Si structure and provided good fatigue performance for PZT capacitors. From these results, the LSCO/Ir/Poly-Si is thought to be the available structure for the fabrication of high-density ferroelectric memory. (C) 2003 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectTHIN-FILMS-
dc.subjectCAPACITORS-
dc.subjectELECTRODES-
dc.subjectHETEROSTRUCTURES-
dc.subjectTECHNOLOGY-
dc.subjectFATIGUE-
dc.subjectSILICON-
dc.subjectRU-
dc.titleCharacterization of LSCO/Ir and LSCO/Ru structure as diffusion barrier layers for highly integrated memory devices-
dc.typeArticle-
dc.identifier.wosid000188080600010-
dc.identifier.scopusid2-s2.0-1642585923-
dc.type.rimsART-
dc.citation.volume7-
dc.citation.issue2-
dc.citation.beginningpage11-
dc.citation.endingpage14-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.1634094-
dc.contributor.localauthorKim, Il-Doo-
dc.contributor.localauthorKim, Ho Gi-
dc.contributor.nonIdAuthorHan, KY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusCAPACITORS-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusFATIGUE-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusRU-
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