DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Choo, DC | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Park, HL | ko |
dc.date.accessioned | 2013-03-06T03:54:06Z | - |
dc.date.available | 2013-03-06T03:54:06Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.78, no.7, pp.922 - 924 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85730 | - |
dc.description.abstract | Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structure in CdxZn1-xTe epitaxial layers grown on (001) GaAs substrates. The SADP showed to sets of superstructure reflections with symmetrical intensities, and the corresponding high-resolution TEM image showed a doublet periodicity in the contrast of the {111} lattice planes. The results of the SADP and the TEM measurements showed the existence of a CuPt-type ordered structured in the CdxZn1-xTe epitaxial layers. This CuPt-type ordered structure had two different variants with an antiphase boundary existing between the two variants. The formation of a CuPt-type ordered structure in a CdxZn1-xTe epitaxial layer might originate from the minimization of the strain relaxation energy in the reconstructed GaAs (001) surface. A possible atomic arrangement of and a formation mechanism for the CuPt-type ordered structure in the CdxZn1-xTe epitaxial layer are presented based on the TEM results. These results provide important information on the microstructural properties for improving the efficiencies of optoelectronic devices operating in blue-green spectral regions. (C) 2001 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | LONG-RANGE ORDER | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | CDTE-FILMS | - |
dc.subject | ALLOYS | - |
dc.subject | DISORDER | - |
dc.subject | (111)B | - |
dc.subject | LAYERS | - |
dc.subject | GAINP | - |
dc.title | Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000166772600024 | - |
dc.identifier.scopusid | 2-s2.0-0000420935 | - |
dc.type.rims | ART | - |
dc.citation.volume | 78 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 922 | - |
dc.citation.endingpage | 924 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1345841 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Choo, DC | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Park, HL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LONG-RANGE ORDER | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | CDTE-FILMS | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | DISORDER | - |
dc.subject.keywordPlus | (111)B | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | GAINP | - |
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