Stress effect on the tuning properties of Ba0.5Sr0.5TiO3 thin films

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dc.contributor.authorKim, Il-Dooko
dc.contributor.authorPark, JHko
dc.contributor.authorKim, Ho Giko
dc.date.accessioned2013-03-05T03:18:34Z-
dc.date.available2013-03-05T03:18:34Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-07-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.7, pp.18 - 21-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/85247-
dc.description.abstractFerroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. Perovskite Ba0.5Sr0.5TiO3 thin films were deposited on Pt/Ti/SiO2/Si and LSCO/Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. Extensive X-ray diffraction studies exhibit good in-plane relationship of [100]Ba1-xSrxTiO3 (BSTO)//[100//[La0.5Sr0.5CoO3 (LSCO). At the applied voltage of 7 V, the tunability values of barium strontium titanate (BST) films grown on Pt and LSCO/Pt were nearly 2.2:1 and 2.8:1, respectively. The change of dielectric properties in BST/LSCO and BST/Pt is attributed to the change in the film stress and the film orientation. (C) 2002 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectELECTRODES-
dc.titleStress effect on the tuning properties of Ba0.5Sr0.5TiO3 thin films-
dc.typeArticle-
dc.identifier.wosid000175932300011-
dc.identifier.scopusid2-s2.0-0036644180-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.issue7-
dc.citation.beginningpage18-
dc.citation.endingpage21-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.contributor.localauthorKim, Il-Doo-
dc.contributor.localauthorKim, Ho Gi-
dc.contributor.nonIdAuthorPark, JH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusELECTRODES-
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