DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Byong Guk | ko |
dc.contributor.author | Lee, Taek Dong | ko |
dc.date.accessioned | 2013-03-04T21:13:51Z | - |
dc.date.available | 2013-03-04T21:13:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.81, no.12, pp.2214 - 2216 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84163 | - |
dc.description.abstract | A modified tunnel barrier structure for the magnetic tunnel junction (MTJ) was fabricated by inserting a Hf layer in the middle of the Al2O3 tunnel barrier. MTJs with the Hf-inserted barrier show a higher tunnel mangnetoresistance (TMR) ratio and weaker temperature and bias-voltage dependence of TMR compared to the MTJs with a conventional Al2O3 barrier. The enhancement of the TMR ratio and the reduction of the temperature and bias-voltage dependence were attributed to the reduction of defects in the barrier. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MEMORY | - |
dc.title | Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000177911200024 | - |
dc.identifier.scopusid | 2-s2.0-79956049151 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 2214 | - |
dc.citation.endingpage | 2216 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1508413 | - |
dc.contributor.localauthor | Park, Byong Guk | - |
dc.contributor.localauthor | Lee, Taek Dong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MEMORY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.