Enhancement of Er3+ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping

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The effect of C co-doping on the Er3+ luminescence properties of Er-doped hydrogenated amorphous Si (a-Si:H) is investigated. Er-doped a-Si:H thin films co-doped with C were deposited using electron-cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and CH4 with concurrent sputtering of Er. We find that C co-doping greatly increases the room temperature 1.54 mum Er3+ photoluminescence (PL) intensity, with the maximum enhancement by a factor of 4 being obtained at a C concentration of similar to15 at.%. Part of the reason for such enhancement is the suppression of the temperature quenching of the Er3+ PL intensity and liftime, which we attribute to the increased optical bandgap of a-Si:H due to C co-doping. However, unlike other co-dopants such as O that also can enhance the Er3+ PL, C co-doping does not degrade the a-Si:H film quality, demonstrating its suitability for developing Si-based optoelectronic devices.
Publisher
Institute of Pure and Applied Physics
Issue Date
2004-02
Language
English
Article Type
Article
Keywords

III-V SEMICONDUCTORS; OPTICAL-PROPERTIES; ENERGY-TRANSFER; TEMPERATURE-DEPENDENCE; CRYSTALLINE SI; ERBIUM; EXCITATION; FILMS; ELECTROLUMINESCENCE; DEEXCITATION

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, v.43, no.2, pp.444 - 448

ISSN
0021-4922
DOI
10.1143/JJAP.43.444
URI
http://hdl.handle.net/10203/83965
Appears in Collection
NT-Journal Papers(저널논문)
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