Enhancement of Er3+ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping

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dc.contributor.authorMebratu G.K.ko
dc.contributor.authorKim M.J.ko
dc.contributor.authorShin, JungHoonko
dc.date.accessioned2013-03-04T20:14:56Z-
dc.date.available2013-03-04T20:14:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-02-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, v.43, no.2, pp.444 - 448-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/83965-
dc.description.abstractThe effect of C co-doping on the Er3+ luminescence properties of Er-doped hydrogenated amorphous Si (a-Si:H) is investigated. Er-doped a-Si:H thin films co-doped with C were deposited using electron-cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and CH4 with concurrent sputtering of Er. We find that C co-doping greatly increases the room temperature 1.54 mum Er3+ photoluminescence (PL) intensity, with the maximum enhancement by a factor of 4 being obtained at a C concentration of similar to15 at.%. Part of the reason for such enhancement is the suppression of the temperature quenching of the Er3+ PL intensity and liftime, which we attribute to the increased optical bandgap of a-Si:H due to C co-doping. However, unlike other co-dopants such as O that also can enhance the Er3+ PL, C co-doping does not degrade the a-Si:H film quality, demonstrating its suitability for developing Si-based optoelectronic devices.-
dc.languageEnglish-
dc.publisherInstitute of Pure and Applied Physics-
dc.subjectIII-V SEMICONDUCTORS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectENERGY-TRANSFER-
dc.subjectTEMPERATURE-DEPENDENCE-
dc.subjectCRYSTALLINE SI-
dc.subjectERBIUM-
dc.subjectEXCITATION-
dc.subjectFILMS-
dc.subjectELECTROLUMINESCENCE-
dc.subjectDEEXCITATION-
dc.titleEnhancement of Er3+ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping-
dc.typeArticle-
dc.identifier.wosid000220401000004-
dc.identifier.scopusid2-s2.0-2142658757-
dc.type.rimsART-
dc.citation.volume43-
dc.citation.issue2-
dc.citation.beginningpage444-
dc.citation.endingpage448-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES-
dc.identifier.doi10.1143/JJAP.43.444-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorMebratu G.K.-
dc.contributor.nonIdAuthorKim M.J.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoramorphous silicon-
dc.subject.keywordAuthorcarbon co-doping-
dc.subject.keywordAuthorerbium doping-
dc.subject.keywordAuthorluminescence-
dc.subject.keywordAuthoroptoelectronics-
dc.subject.keywordPlusIII-V SEMICONDUCTORS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusENERGY-TRANSFER-
dc.subject.keywordPlusTEMPERATURE-DEPENDENCE-
dc.subject.keywordPlusCRYSTALLINE SI-
dc.subject.keywordPlusERBIUM-
dc.subject.keywordPlusEXCITATION-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusDEEXCITATION-
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