DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mebratu G.K. | ko |
dc.contributor.author | Kim M.J. | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-04T20:14:56Z | - |
dc.date.available | 2013-03-04T20:14:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, v.43, no.2, pp.444 - 448 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83965 | - |
dc.description.abstract | The effect of C co-doping on the Er3+ luminescence properties of Er-doped hydrogenated amorphous Si (a-Si:H) is investigated. Er-doped a-Si:H thin films co-doped with C were deposited using electron-cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and CH4 with concurrent sputtering of Er. We find that C co-doping greatly increases the room temperature 1.54 mum Er3+ photoluminescence (PL) intensity, with the maximum enhancement by a factor of 4 being obtained at a C concentration of similar to15 at.%. Part of the reason for such enhancement is the suppression of the temperature quenching of the Er3+ PL intensity and liftime, which we attribute to the increased optical bandgap of a-Si:H due to C co-doping. However, unlike other co-dopants such as O that also can enhance the Er3+ PL, C co-doping does not degrade the a-Si:H film quality, demonstrating its suitability for developing Si-based optoelectronic devices. | - |
dc.language | English | - |
dc.publisher | Institute of Pure and Applied Physics | - |
dc.subject | III-V SEMICONDUCTORS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ENERGY-TRANSFER | - |
dc.subject | TEMPERATURE-DEPENDENCE | - |
dc.subject | CRYSTALLINE SI | - |
dc.subject | ERBIUM | - |
dc.subject | EXCITATION | - |
dc.subject | FILMS | - |
dc.subject | ELECTROLUMINESCENCE | - |
dc.subject | DEEXCITATION | - |
dc.title | Enhancement of Er3+ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping | - |
dc.type | Article | - |
dc.identifier.wosid | 000220401000004 | - |
dc.identifier.scopusid | 2-s2.0-2142658757 | - |
dc.type.rims | ART | - |
dc.citation.volume | 43 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 444 | - |
dc.citation.endingpage | 448 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES | - |
dc.identifier.doi | 10.1143/JJAP.43.444 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Mebratu G.K. | - |
dc.contributor.nonIdAuthor | Kim M.J. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | amorphous silicon | - |
dc.subject.keywordAuthor | carbon co-doping | - |
dc.subject.keywordAuthor | erbium doping | - |
dc.subject.keywordAuthor | luminescence | - |
dc.subject.keywordAuthor | optoelectronics | - |
dc.subject.keywordPlus | III-V SEMICONDUCTORS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ENERGY-TRANSFER | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | CRYSTALLINE SI | - |
dc.subject.keywordPlus | ERBIUM | - |
dc.subject.keywordPlus | EXCITATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
dc.subject.keywordPlus | DEEXCITATION | - |
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