DC Field | Value | Language |
---|---|---|
dc.contributor.author | 원만호 | ko |
dc.contributor.author | 김상철 | ko |
dc.contributor.author | 안진형 | ko |
dc.contributor.author | 김보현 | ko |
dc.contributor.author | 안병태 | ko |
dc.date.accessioned | 2013-03-04T18:39:17Z | - |
dc.date.available | 2013-03-04T18:39:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | 한국재료학회지, v.12, no.9, pp.724 - 728 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83664 | - |
dc.description.abstract | Inductively-coupled N₂O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At 400℃, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times1011</TEX> ㎠ with negative charge. The N₂O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to O2 plasma gate oxide, due to the reduced interface charge at the $Si/SiO2 interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation. | - |
dc.language | Korean | - |
dc.publisher | 한국재료학회 | - |
dc.title | 유도결합 N2O 플라즈마를 이용한 실리콘 산화막의 저온성장과 다결정 실리콘 박막 트랜지스터에의 영향 | - |
dc.title.alternative | Silicon Oxidation in Inductively-Coupled N2O Plasma and its Effect on Polycrystalline-Silicon Thin Film Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 724 | - |
dc.citation.endingpage | 728 | - |
dc.citation.publicationname | 한국재료학회지 | - |
dc.identifier.kciid | ART000920977 | - |
dc.contributor.localauthor | 안병태 | - |
dc.contributor.nonIdAuthor | 원만호 | - |
dc.contributor.nonIdAuthor | 김상철 | - |
dc.contributor.nonIdAuthor | 안진형 | - |
dc.contributor.nonIdAuthor | 김보현 | - |
dc.subject.keywordAuthor | inductively-coupled N2O plasma | - |
dc.subject.keywordAuthor | low-temperature oxide | - |
dc.subject.keywordAuthor | interface charge | - |
dc.subject.keywordAuthor | nitrogen passivation | - |
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